Resonant tunneling through Quantum States of Enhancement Mode an In-Plane-Gate Quantum Dot Transistor.

We demonstrate electron transport in an enhancement mode in-plane-gate quantum dot transistor (IPGQDT). Deeply etched trenches allow large positive biases on the IPG with negligible leakage current Strong negative differential resistance (NDR) peaks and single electron tunneling are observed in a wide gate bias window. The position of the NDR peaks systematically moves with the change of the gate bias, suggesting that they originate from resonant tunneling through QD quantum states. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]