Negative Persistent Photoconductivity Effect on Weak Anti-Localization in Hetero-Interface of InSb/GaAs(100).

Spin-orbit interaction (SOI) in the weak anti-localization has been investigated for the accumulation layer at InSb/GaAs(100) hetero-interface, tuning carrier concentration and mobility by means of negative persistent photoconductivity effect. The SO field deduced from the fits of magnetoconductance taking account of the spin-Zeeman effect on SOI has been found to be independent of the carrier concentration, indicating that the Rashba effect due to the asymmetric electric field at the interface is the dominant mechanism of SOI in our system. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]