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Anatase TiO2 films with 2.2eV band gap prepared by micro-arc oxidation

Authors :
Wan, L.
Li, J.F.
Feng, J.Y.
Sun, W.
Mao, Z.Q.
Source :
Materials Science & Engineering: B. May2007, Vol. 139 Issue 2/3, p216-220. 5p.
Publication Year :
2007

Abstract

Abstract: Anatase TiO2 films were prepared by micro-arc oxidation of TiN films in a Na3PO4 electrolytic solution, while TiN films were obtained by ion beam assisted deposition on Ti substrates. The crystal structure, surface morphology and optical property of the films were investigated by X-ray diffraction (XRD), X-ray fluorescence spectroscopy (XRF), scanning electron microscopy (SEM) and UV–vis spectroscopy, respectively. The photocatalytic activity of the films was evaluated by the decomposition of methylene blue. Mechanisms for micro-arc oxidation and band gap narrowing of N-doped TiO2 were discussed. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
09215107
Volume :
139
Issue :
2/3
Database :
Academic Search Index
Journal :
Materials Science & Engineering: B
Publication Type :
Academic Journal
Accession number :
24970725
Full Text :
https://doi.org/10.1016/j.mseb.2007.02.014