Cite
Structural properties of Ge doped CuGaSe2 films studied by Raman and Photoluminescence spectroscopy
MLA
Theodoropoulou, S., et al. “Structural Properties of Ge Doped CuGaSe2 Films Studied by Raman and Photoluminescence Spectroscopy.” Thin Solid Films, vol. 515, no. 15, May 2007, pp. 5904–08. EBSCOhost, https://doi.org/10.1016/j.tsf.2006.12.163.
APA
Theodoropoulou, S., Papadimitriou, D., Doka, S., Schedel-Niedrig, T., & Lux-Steiner, M. C. (2007). Structural properties of Ge doped CuGaSe2 films studied by Raman and Photoluminescence spectroscopy. Thin Solid Films, 515(15), 5904–5908. https://doi.org/10.1016/j.tsf.2006.12.163
Chicago
Theodoropoulou, S., D. Papadimitriou, S. Doka, Th. Schedel-Niedrig, and M.Ch. Lux-Steiner. 2007. “Structural Properties of Ge Doped CuGaSe2 Films Studied by Raman and Photoluminescence Spectroscopy.” Thin Solid Films 515 (15): 5904–8. doi:10.1016/j.tsf.2006.12.163.