Back to Search
Start Over
Low-damage surface smoothing of laser crystallized polycrystalline silicon using gas cluster ion beam
- Source :
-
Nuclear Instruments & Methods in Physics Research Section B . Apr2007, Vol. 257 Issue 1/2, p658-661. 4p. - Publication Year :
- 2007
-
Abstract
- Abstract: Surface smoothing of laser crystallized polycrystalline silicon (poly-Si) films using gas cluster ion beam (GCIB) technology has been studied. It is found that both SF6-GCIB and O2-GCIB decrease the height of hillocks and reduce the surface roughness of the irradiated films. The mean surface roughness value of poly-Si films was reduced from 10.8nm to 2.8nm by SF6-GCIB irradiation at 80°. Ultraviolet reflectance measurement reveals that GCIB irradiation causes damage near-surface of the poly-Si films. Formation of the damage, however, can be suppressed by using GCIB irradiation at high incident angle. Effect of GCIB irradiation in a metal–insulator–semiconductor (MIS) capacitor has also been investigated. The capacitance–voltage curves of MIS capacitor with SF6-GCIB irradiation are distorted. On the contrary, the distortion is reduced by O2-GCIB irradiation at 80, which suggests that electrical-activated damage of the films can be decreased by using O2-GCIB irradiation. [Copyright &y& Elsevier]
- Subjects :
- *SURFACES (Technology)
*SILICON
*POLYCRYSTALS
*ION bombardment
Subjects
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 257
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section B
- Publication Type :
- Academic Journal
- Accession number :
- 24542553
- Full Text :
- https://doi.org/10.1016/j.nimb.2007.01.269