Back to Search
Start Over
Ar+ irradiation of Si nanocrystal-doped SiO2: Evolution of photoluminescence
- Source :
-
Applied Surface Science . Apr2007, Vol. 253 Issue 12, p5501-5505. 5p. - Publication Year :
- 2007
-
Abstract
- Abstract: We report the evolution of photoluminescence (PL) of Si nanocrystals (nc-Si) embedded in a matrix of SiO2 during Ar+ ion bombardment. The integrated intensity of nc-Si PL falls down drastically before the Ar+ ion fluence of 1015 ionscm−2, and then decreases slowly with the increasing ion fluence. At the meantime, the PL peak position blueshifts steadily before the fluence of 1015 ionscm−2, and then changes in an oscillatory manner. Also it is found that the nc-Si PL of the Ar+-irradiated sample can be partly recovered after annealing at 800°C in nitrogen, but can be almost totally recovered after annealing in oxygen. The results confirm that the ion irradiation-induced defects are made up of oxygen vacancies, which absorb light strongly. The oscillatory peak shift of nc-Si can be related to a size-distance distribution of nc-Si in SiO2. [Copyright &y& Elsevier]
- Subjects :
- *PHOTOLUMINESCENCE
*SILICA
*NANOCRYSTALS
*ION bombardment
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 253
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 24299208
- Full Text :
- https://doi.org/10.1016/j.apsusc.2006.12.031