Temperature dependent study on the microwave noise performance of metamorphic InP/InGaAs heterojunction bipolar transistors

Abstract: In this study, a detailed characterization on the microwave noise performance of high gain metamorphic heterojunction bipolar transistor (MHBT) in the temperature range of 300 K to 380 K is performed. The results are compared between the MHBT and the referenced lattice-matched InP HBT (LHBT) devices. The minimum noise figure (NFmin) versus frequency in the range of 2 to 20 GHz at different temperatures for a 1.6×20 μm2 HBTs are measured. The experimental results show that the MHBT exhibits a slightly larger variation in NFmin compared to lattice-matched HBTs. Even though the MHBTs may have much higher thermal resistance, this may not significantly affect the device microwave noise performance. [Copyright &y& Elsevier]