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Comparative study of InAs quantum dots with different InGaAs capping methods.
- Source :
-
Applied Physics Letters . 2/5/2007, Vol. 90 Issue 6, p063102-N.PAG. 3p. 1 Diagram, 2 Graphs. - Publication Year :
- 2007
-
Abstract
- The authors have used cross-sectional scanning tunneling microscopy to examine strain relaxation profiles of InAs quantum dots with In0.33Ga0.67As layers overgrown by three distinct capping methods. A statistical analysis of strain relaxation profile allowed them to infer that the long wavelength emission (>1.3 μm) of InAs quantum dots capped with sequential GaAs/InAs binary growth is mainly due to a weaker quantum confinement effect. This particular capping method is better than the traditional molecular beam epitaxy with simultaneous In/Ga/As deposition, and much better than a capping method with separated Ga deposition followed by As and InAs growth. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 90
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 24092117
- Full Text :
- https://doi.org/10.1063/1.2454425