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Influences of laser lift-off process on the performances of large-area light-emitting diodes

Authors :
Hu, C.Y.
Kang, X.N.
Fang, H.
Dai, T.
Wang, M.J.
Qin, Z.X.
Chen, Z.Z.
Yang, H.
Shen, B.
Zhang, G.Y.
Source :
Journal of Crystal Growth. Jan2007, Vol. 298, p719-721. 3p.
Publication Year :
2007

Abstract

Abstract: Influences of laser lift-off (LLO) process on the performances of large-area light emitting diodes(LALEDs) have been investigated. The current–voltage (I–V), light output power–current (L–I) and electroluminescence (EL) results are presented for the same LALEDs before and after LLO process, respectively. In this way, it was proved that the LLO process had no influence on the I–V profiles and the wavelength of the LALEDs. However, the detachment of the sapphire substrate increased the light output of the LLO-LALEDs. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00220248
Volume :
298
Database :
Academic Search Index
Journal :
Journal of Crystal Growth
Publication Type :
Academic Journal
Accession number :
23824013
Full Text :
https://doi.org/10.1016/j.jcrysgro.2006.10.128