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Epitaxial lateral overgrowth of Al x Ga1− x N (x>0.2) on sapphire and its application to UV-B-light-emitting devices
- Source :
-
Journal of Crystal Growth . Jan2007, Vol. 298, p265-267. 3p. - Publication Year :
- 2007
-
Abstract
- Abstract: Crack-free and low-dislocation-density Al x Ga1− x N with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer. [Copyright &y& Elsevier]
- Subjects :
- *LIGHT emitting diodes
*CRYSTAL growth
*CRYSTALLIZATION
*SEMICONDUCTOR diodes
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 298
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 23823906
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2006.10.026