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Photoluminescence and persistent photoconductivity of AlxGa1-xN/GaN heterostructures.
- Source :
-
Applied Physics A: Materials Science & Processing . Mar2007, Vol. 86 Issue 4, p521-524. 4p. 5 Graphs. - Publication Year :
- 2007
-
Abstract
- We have investigated the optical properties of AlxGa1-xN/GaN heterostructures (x=0.08, 0.15, 0.33) grown by metal organic chemical vapor deposition on sapphire using photoluminescence (PL) and persistent photoconductivity (PPC) measurements. For the AlxGa1-xN/GaN heterostructures (HS) containing high Al composition, we observed an anomalous temperature-dependent photoluminescence and persistent photoconductivity effects. These results show a strong dependence of the physical properties of AlxGa1-xN/GaN HS on the Al content and layer thickness. The anomalous temperature-dependent PL is usually attributed to the presence of carrier localization states. These phenomena are explained based on the alloy compositional fluctuations in the AlxGa1-xN/GaN HS. From the PPC measurements, the photocurrent (PC) quenching was observed for AlxGa1-xN/GaN HS and it is explained by the metastable states formed in the underlying GaN layer. Also, the mechanisms behind the PC quenching and PPC phenomena are explained in detail. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 86
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 23792054
- Full Text :
- https://doi.org/10.1007/s00339-006-3804-9