MEMORY EFFECT MINIMIZATION AND WIDE, INSTANTANEOUS BANDWIDTH OPERATION OF A BASE STATION POWER AMPLIFIER.

Authors :: Jeonghyeon Cha
Kim, Ildu
Sungchul Hong
Kim, Bumman
Jong Sung Lee
Han Seok Kim
Source :: Microwave Journal. Jan2007, Vol. 50 Issue 1, p66-82. 9p.
Publication Year :: 2007
Abstract: The article discusses the memory effect minimization and wide instantaneous bandwidth operation of a base station power amplifier. The third-order intermodulation distortion current is analyzed using a simple nonlinear laterally diffused metal oxide semiconductor field-effect transistor (LDMOS-FET) model and a third-order power series. The article examines the limitations in shorting the envelope and second harmonics.

Subjects :: *MOBILE communication systems
*TELECOMMUNICATION systems
*FIELD-effect transistors
*METAL oxide semiconductor field-effect transistors
*BANDWIDTHS
*POWER amplifiers

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