Cite
Carrier concentration induced band-gap shift in Al-doped Zn1-xMgxO thin films.
MLA
Lu, J. G., et al. “Carrier Concentration Induced Band-Gap Shift in Al-Doped Zn1-XMgxO Thin Films.” Applied Physics Letters, vol. 89, no. 26, Dec. 2006, p. 262107. EBSCOhost, https://doi.org/10.1063/1.2424308.
APA
Lu, J. G., Fujita, S., Kawaharamura, T., Nishinaka, H., Kamada, Y., & Ohshima, T. (2006). Carrier concentration induced band-gap shift in Al-doped Zn1-xMgxO thin films. Applied Physics Letters, 89(26), 262107. https://doi.org/10.1063/1.2424308
Chicago
Lu, J. G., S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, and T. Ohshima. 2006. “Carrier Concentration Induced Band-Gap Shift in Al-Doped Zn1-XMgxO Thin Films.” Applied Physics Letters 89 (26): 262107. doi:10.1063/1.2424308.