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High frequencies characterization of Cu-MIM capacitors in parallel configuration for advanced integrated circuits

Authors :
Piquet, J.
Bermond, C.
Thomas, M.
Fléchet, B.
Farcy, A.
Vo, T.T.
Lacrevaz, T.
Torres, J.
Cueto, O.
Angénieux, G.
Source :
Microelectronic Engineering. Nov2006, Vol. 83 Issue 11/12, p2341-2345. 5p.
Publication Year :
2006

Abstract

Abstract: New metal insulator metal (MIM) capacitors in parallel configuration have been implemented between upper copper interconnect levels using a damascene architecture. High frequency characterization has been performed on these devices in order to study their electrical performances. A new extraction method has been developed to obtain a lumped electrical equivalent model of MIM capacitors that is frequency dependant. Many designs have been used. Thanks to the high frequency characterization, a quality factor Q has been established. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
01679317
Volume :
83
Issue :
11/12
Database :
Academic Search Index
Journal :
Microelectronic Engineering
Publication Type :
Academic Journal
Accession number :
23205681
Full Text :
https://doi.org/10.1016/j.mee.2006.10.028