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1.54μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD
- Source :
-
Journal of Luminescence . Dec2006, Vol. 121 Issue 2, p230-232. 3p. - Publication Year :
- 2006
-
Abstract
- Abstract: In this work, silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide (SRSO) matrix doped with Er3+ ions for different erbium and silicon concentrations have been deposited by electron-cyclotron resonance plasma-enhanced chemical-vapor-deposition (ECR-PECVD) technique. Their optical properties have been investigated by photoluminescence (PL) and reflectance spectroscopy. Room temperature emission bands centered at ∼1.54 and at 0.75μm have been obtained for all samples. The most intense emission band at ∼1.54μm was obtained for samples with concentrations of 0.45% and 39% for erbium and silicon, respectively. Moreover, it has been found that the broad emission band centered at ∼0.75μm for all samples shows a very strong interference pattern related to the a specific sample structure and a high sample quality. [Copyright &y& Elsevier]
- Subjects :
- *NANOCRYSTALS
*NONMETALS
*SILICON
*RESONANCE
Subjects
Details
- Language :
- English
- ISSN :
- 00222313
- Volume :
- 121
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Luminescence
- Publication Type :
- Academic Journal
- Accession number :
- 22947132
- Full Text :
- https://doi.org/10.1016/j.jlumin.2006.07.017