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Recent advances of planar silicon APD technology

Authors :
McClish, M.
Farrell, R.
Myers, R.
Olschner, F.
Entine, G.
Shah, K.S.
Source :
Nuclear Instruments & Methods in Physics Research Section A. Nov2006, Vol. 567 Issue 1, p36-40. 5p.
Publication Year :
2006

Abstract

Abstract: Radiation Monitoring Devices previously reported to have fabricated, using a planar processed, deep diffused silicon avalanche photodiodes (APDs) and position sensitive APDs (PSAPDs) that can be used for direct or scintillation-based spectroscopic and imaging applications. We have developed high gain (∼1000), high quantum efficiency (40–70% in the 200–900nm region) at unity gain, relatively low noise, and magnetically insensitive APDs up to 45cm2 in area and PSAPDs up to 2.8×2.8cm2 in area. These detectors have begun to be implemented in applications such as positron emission tomography (PET) and single photon emission computerized tomography (SPECT) for medical imaging, high-energy physics experiments as water Cherenkov detectors and liquefied noble gas calorimeters, and receivers for long-range optical communication at near infrared (IR) wavelengths (1064nm). Also, our PSAPDs have been combined with photocathode structures, similar to a photomultiplier tube (PMT), to fabricate hybrid devices. Here, we present a small review and a sample of results showing various applications utilizing our planar processed APDs and PSAPDs. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
01689002
Volume :
567
Issue :
1
Database :
Academic Search Index
Journal :
Nuclear Instruments & Methods in Physics Research Section A
Publication Type :
Academic Journal
Accession number :
22656875
Full Text :
https://doi.org/10.1016/j.nima.2006.05.055