Control of p- and n-type conductivities in Li-doped ZnO thin films.

Authors :: Lu, J. G.
Zhang, Y. Z.
Ye, Z. Z.
Zeng, Y. J.
He, H. P.
Zhu, L. P.
Huang, J. Y.
Wang, L.
Yuan, J.
Zhao, B. H.
Li, X. H.
Source :: Applied Physics Letters. 9/11/2006, Vol. 89 Issue 11, p112113. 3p. 1 Chart, 4 Graphs.
Publication Year :: 2006
Abstract: Li-doped ZnO films were prepared by pulsed laser deposition. The carrier type could be controlled by adjusting the growth conditions. In an ionized oxygen atmosphere, p-type ZnO was achieved, with the hole concentration of 6.04 × 1017 cm-3 at an optimal Li content of 0.6 at. %, whereas ZnO exhibited n-type conductivity in a conventional O2 growth atmosphere. At a Li content of more than 1.2 at. % only high-resistivity ZnO was obtained. The amount of Li introduced into ZnO and the relative concentrations of such defects as Li substitutions and interstitials could play an important role in determining the conductivity of films. [ABSTRACT FROM AUTHOR]