Stranski–Krastanow growth of GaN quantum dots by metalorganic chemical vapor deposition

We have successfully grown GaN self-assembled quantum dots (QDs) on an AlN layer by low-pressure metalorganic chemical vapor deposition. The average diameter and height of the QDs were 35 and 1.6 nm, respectively. The density of GaN QDs was around 6×108 cm-2 when the amount of GaN deposited was 2.5 mono-layer (ML). The dependence of the QD density on the GaN coverage was investigated. The coverage when GaN QDs are formed is estimated to be 1.0 ML. The formation of the QDs was much affected by the growth temperature, and its behavior was same as other QDs grown by the Stranski–Krastanow mode. [Copyright &y& Elsevier]