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Low-pressure MOCVD growth of GaN/AlGaN multiple quantum wells for intersubband transitions
- Source :
-
Journal of Crystal Growth . Apr2002 Part 2, Vol. 237-239 Issue 1-2, p1163-1166. 4p. - Publication Year :
- 2002
-
Abstract
- We have investigated intersubband absorption of GaN/Al0.58Ga0.42N multiple quantum well structures of high quality, which were grown by low-pressure metal organic chemical vapor deposition (MOCVD). The crystalline quality and uniformity of the AlGaN barriers were improved by suppressing gas-phase parasitic reaction between NH3 and TMAl. This, in turn, produced a very sharp intersubband absorption spectrum with a spectral linewidth as narrow as 35 meV. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 237-239
- Issue :
- 1-2
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 22421493
- Full Text :
- https://doi.org/10.1016/S0022-0248(01)02149-2