Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

Phase separation of AlGaN is found to occur during growth on periodically trenched GaN, and it sometimes causes crack formation. The rate of separation can be suppressed by decreasing NH3 flow rate in the gas phase. We can optimize the growth condition for AlGaN growth, thereby fabricating UV-LED with an emission wavelength of 352 nm and output power of 0.6 mW at 50 mA. [Copyright &y& Elsevier]