Demonstration of large active area AlGaN solar-blind Schottky photodiodes with low dark current.

Solar-blind AlGaN Schottky photodiodes with a large active area of 2×2 mm have been fabricated on a AlN/sapphire template. The resulting devices show dark current density as low as 6.6×10-11 A at -5 V bias. A zero-bias peak responsivity of 38 mA/W was obtained at 260 nm, corresponding to an estimated detectivity of 1.2×1014 cm Hz1/2 W-1. [ABSTRACT FROM AUTHOR]