GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation.

MLA

Mikulics, Martin, et al. “GaAs Photodetectors Prepared by High-Energy and High-Dose Nitrogen Implantation.” Applied Physics Letters, vol. 89, no. 9, Aug. 2006, p. 091103. EBSCOhost, https://doi.org/10.1063/1.2339907.

APA

Mikulics, M., Marso, M., Mantl, S., Lüth, H., & Kordosˇ, P. (2006). GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation. Applied Physics Letters, 89(9), 091103. https://doi.org/10.1063/1.2339907

Chicago

Mikulics, Martin, Michel Marso, Siegfried Mantl, Hans Lüth, and Peter Kordosˇ. 2006. “GaAs Photodetectors Prepared by High-Energy and High-Dose Nitrogen Implantation.” Applied Physics Letters 89 (9): 091103. doi:10.1063/1.2339907.