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Measurement of Single-Event Effects on a Large Number of Commercial DRAMs.

Authors :
Sasada, T.
Ichikawa, S.
Kanai, T.
Source :
IEEE Transactions on Nuclear Science. Aug2006 Part 1 Of 2, Vol. 53 Issue 4, p1806-1812. 7p. 1 Black and White Photograph, 2 Diagrams, 6 Charts, 6 Graphs.
Publication Year :
2006

Abstract

To evaluate the characteristics of commercial memory devices for space use, the Japan Aerospace Exploration Agency (JAXA) launched a Solid State Recorder (SSR) on the Mission Demonstration test Satellite-1 (MDS-1 or ‘Tsubasa’) into geo-stationary transfer orbit (GTO) in February 2002. Passing through the radiation belt exposed the MDS-1 to severe radiation environment in every orbit. This flight experiment allowed the observation of Single-Event Upsets (SEU) and Total Ionizing Dose (TID) effect on a large number of stacked 64 Mbit Dynamic Random Access Memories (DRAM). As a result, the actual SEU rates could be calculated, and the capabilities of two types of on-the-fly Error Detection and Correction (EDAC) mechanisms were confirmed. This paper presents the results of the space experiment of SSR, focusing especially on SEU analysis. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189499
Volume :
53
Issue :
4
Database :
Academic Search Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
22324648
Full Text :
https://doi.org/10.1109/TNS.2006.880928