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High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions

Authors :
Ninomiya, Satoshi
Aoki, Takaaki
Seki, Toshio
Matsuo, Jiro
Source :
Applied Surface Science. Jul2006, Vol. 252 Issue 19, p6550-6553. 4p.
Publication Year :
2006

Abstract

Abstract: Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion bombardment. Incident ion beams with energies from 7.5 to 25keV were used and the mean size of the Ar cluster ion was about 1000atoms/cluster. Si n + ions with n values up to n =8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
01694332
Volume :
252
Issue :
19
Database :
Academic Search Index
Journal :
Applied Surface Science
Publication Type :
Academic Journal
Accession number :
22009573
Full Text :
https://doi.org/10.1016/j.apsusc.2006.02.100