Cite
Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb.
MLA
Voronina, T. I. .., et al. “Magnetotransport Properties of Type II Heterojunctions Based on GaInAsSb/InAs and GaInAsSb/GaSb.” Semiconductors, vol. 40, no. 5, May 2006, pp. 503–20. EBSCOhost, https://doi.org/10.1134/S1063782606050022.
APA
Voronina, T. I. ., Lagunova, T. S., Mikhaĭlova, M. P., Moiseev, K. D., Lipaev, A. F., & Yakovlev, Y. P. (2006). Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb. Semiconductors, 40(5), 503–520. https://doi.org/10.1134/S1063782606050022
Chicago
Voronina, T. I.., T. S. Lagunova, M. P. Mikhaĭlova, K. D. Moiseev, A. F. Lipaev, and Yu. P. Yakovlev. 2006. “Magnetotransport Properties of Type II Heterojunctions Based on GaInAsSb/InAs and GaInAsSb/GaSb.” Semiconductors 40 (5): 503–20. doi:10.1134/S1063782606050022.