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Microwave induced Shubnikov–de Hass-type oscillation in InGaAs/InAlAs heterostructures
- Source :
-
Physica E . Aug2006, Vol. 34 Issue 1/2, p393-396. 4p. - Publication Year :
- 2006
-
Abstract
- Abstract: Microwave photoconductivity measurements of InGaAs/InAlAs and GaAs/AlGaAs heterostructures were carried out to investigate electronic spin states. In far-infrared magneto-optical absorption measurement, we confirmed a zero-field spin-splitting energy of the InGaAs/InAlAs heterostructure is 9meV. In microwave modulated photoconductivity measurements, Shubnikov–de Haas oscillation was observed with quite high sensitivity. The energy of the sample was also determined from the oscillation. A dip structure was observed near cyclotron resonance field. By comparing with the result in GaAs/AlGaAs heterostructures and considering the heating effect by microwave irradiation, the origin of the Shubnikov–de Haas-type oscillation and the appearing dip structure are discussed. [Copyright &y& Elsevier]
- Subjects :
- *HETEROSTRUCTURES
*GALLIUM arsenide
*ELECTRIC conductivity
*OSCILLATIONS
Subjects
Details
- Language :
- English
- ISSN :
- 13869477
- Volume :
- 34
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Physica E
- Publication Type :
- Academic Journal
- Accession number :
- 21864039
- Full Text :
- https://doi.org/10.1016/j.physe.2006.03.091