p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth.

Authors :: Zeng, Y. J.
Ye, Z. Z.
Xu, W. Z.
Lu, J. G.
He, H. P.
Zhu, L. P.
Zhao, B. H.
Che, Y.
Zhang, S. B.
Source :: Applied Physics Letters. 6/26/2006, Vol. 88 Issue 26, p262103. 3p. 1 Chart, 4 Graphs.
Publication Year :: 2006
Abstract: We report on intrinsic p-type ZnO thin films by plasma-assisted metal-organic chemical vapor deposition. The optimal results give a resistivity of 12.7 Ω cm, a Hall mobility of 2.6 cm2/V s, and a hole concentration of 1.88×1017 cm-3. The oxygen concentration is increased in the intrinsic p-type ZnO, compared with the n-type layer. Two acceptor states, with the energy levels located at 160 and 270 meV above the valence band maximum, are identified by temperature-dependent photoluminescence. The origin of intrinsic p-type behavior has been ascribed to the formation of zinc vacancy and some complex acceptor center. [ABSTRACT FROM AUTHOR]