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Nanoporous structure of low-dielectric-constant films: A process compatibility study.
- Source :
-
Journal of Applied Physics . 6/1/2006, Vol. 99 Issue 11, p113514. 5p. 7 Graphs. - Publication Year :
- 2006
-
Abstract
- Positron annihilation lifetime spectroscopy (PALS) was used to study the nanoporous structure of spin-on and chemical vapor deposited low dielectric constant (low-k) films. Orthopositronium (o-Ps) lifetimes provided information on pore size, open and closed porosities, and depth profile of pore sizes in low-k films. In combination with three-photon (3γ) yield obtained from positron annihilation spectroscopy, the formation, diffusion, and annihilation of o-Ps are correlated with the chemical composition of matrix. The weak interaction between o-Ps and matrix with the network structure composed of Si, C, O, and H atoms allows us to extract nanoporous information from o-Ps lifetime and 3γ yield. The effects of pore generator (porogen) chemistry, thin film capping, plasma treatment, and positron radiation on nanoporous structure in several low-k films were demonstrated, which provided the information on process compatibility of low-k films. Unsolved issues related with Ps probing nano-structure of porous low-k films are summarized. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 99
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 21300089
- Full Text :
- https://doi.org/10.1063/1.2201307