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Effects of annealing and dopant concentration on the optical characteristics of ZnO:Al thin films by sol–gel technique
- Source :
-
Physica B . Jun2006, Vol. 382 Issue 1/2, p201-204. 4p. - Publication Year :
- 2006
-
Abstract
- Abstract: ZnO:Al thin films doped with different aluminum concentrations were deposited on (0001) sapphire substrates by the sol–gel technique. Thermal annealing of ZnO:Al films was carried out in an argon ambient at various annealing temperatures from 600 to 950°C. The effects of thermal annealing and dopant concentration on the optical properties of ZnO:Al thin films were investigated. It is found that near band edge UV emission is enhanced by increasing the annealing temperature and dopant concentration. But defect-related deep-level emission decreases with the increasing dopant concentration and thermal annealing has little influence as the deep-level emission. The optical band gap of ZnO:Al films increases from 3.21 to 3.25eV on increasing the dopant concentration from 0.01% to 1%. The optical transmittance decreases in the visible region, while it increases in the ultraviolet region with an increase in the annealing temperature. [Copyright &y& Elsevier]
- Subjects :
- *THIN films
*EXCITON theory
*MOLECULAR spectroscopy
*NOBLE gases
Subjects
Details
- Language :
- English
- ISSN :
- 09214526
- Volume :
- 382
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Physica B
- Publication Type :
- Academic Journal
- Accession number :
- 21189108
- Full Text :
- https://doi.org/10.1016/j.physb.2006.02.032