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ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition.
- Source :
-
Applied Physics Letters . 4/24/2006, Vol. 88 Issue 17, p173506. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 2006
-
Abstract
- We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 1016–1017 cm-3 and mobility of 1–10 cm2 V-1 s-1. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40 mA and defect-related emissions in the blue-yellow spectrum range. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 88
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 20788820
- Full Text :
- https://doi.org/10.1063/1.2199588