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Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by metal organic vapor phase epitaxy.
- Source :
-
Applied Physics Letters . 3/27/2006, Vol. 88 Issue 13, p132102. 3p. 1 Diagram, 2 Graphs. - Publication Year :
- 2006
-
Abstract
- Intense mid-infrared (λ∼2 μm) room temperature electroluminescence from metal organic vapor phase epitaxy (MOVPE) grown type-I single AlSb/InAsSb/AlSb quantum wells (QWs) is reported. The spectral position of the electroluminescent peaks is in good agreement with k·p envelope function calculation in the frame of four-band Kane’s model taking into account the intermixing of s and p states in the deep quantum well. A four times increase of the emission intensity with temperature increasing from 77 to 300 K can be explained by highly efficient radiative recombination of the electrons injected into the narrow AlSb/InAsSb/AlSb QW due to its specific design, leading to Auger process suppression. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 88
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 20735901
- Full Text :
- https://doi.org/10.1063/1.2189572