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Transient processes in a Ge/Si hetero-nanocrystal p-channel memory
- Source :
-
Solid-State Electronics . Mar2006, Vol. 50 Issue 3, p362-366. 5p. - Publication Year :
- 2006
-
Abstract
- Abstract: Transient processes of Ge/Si hetero-nanocrystal floating gate memories are simulated numerically. Compared with Si nanocrystal memories, Ge/Si hetero-nanocrystal memories show similar writing and erasing efficiency with a weaker writing saturation and markedly improved retention characteristics. [Copyright &y& Elsevier]
- Subjects :
- *NANOCRYSTALS
*NANOPARTICLES
*SOLID state electronics
*SOLID state physics
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 50
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 20555117
- Full Text :
- https://doi.org/10.1016/j.sse.2006.01.008