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A Micrometric Thickness Silicon Diode Proposed as a Microdosimeter.
- Source :
-
IEEE Transactions on Nuclear Science . Feb2006 Part 2, Vol. 53 Issue 1, p312-316. 5p. 2 Diagrams, 12 Graphs. - Publication Year :
- 2006
-
Abstract
- A thin silicon diode formed by a deep p+ implantation under a shallow n+ one is proposed as a solid state micro- dosimeter. The thickness of the sensitive layer of the tested device is about two micrometers and the active area is about 10 mm². Due to the very large electric capacitance of the diode (about 1 nF) a low noise read-out circuit based on a discrete JFET has been developed. The noise due to the parasitic resistance of the detector itself dominates and fixes the lower threshold of the energy spectrum. A prototype of the proposed microdosimeter covered with a polyethylene converter has been irradiated with fast monoenergetic neutrons at the INFN-Legnaro Labs (I). The first experimental spectra are in good agreement with the simulated ones. The effect of direct inter- actions of thermal neutrons in silicon has been measured. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 53
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 20451398
- Full Text :
- https://doi.org/10.1109/TNS.2006.869832