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Proton-Induced Damage in Gallium Nitride-Based Schottky Diodes.

Authors :
Karmarkar, Aditya P.
White, Brad D.
Buttari, Dario
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Weller, Robert A.
Brilison, Leonard J.
Mishra, Umesh K.
Source :
IEEE Transactions on Nuclear Science. Dec2005 Part 1, Vol. 52 Issue 6, p2239-2244. 6p.
Publication Year :
2005

Abstract

Proton irradiation decreases the doping concentration and increases the ideality factor and series resistance, but has very little effect on the Schottky barrier height in n-Gallium nitride Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher nonionizing energy loss. The displacement damage recovers during annealing. Comparison between Schottky diodes and high electron-mobility transistors suggests that the degradation in both types of devices is predominantly due to carrier removal and mobility degradation caused by radiation-induced defect centers in the crystal lattice, with interface disorder playing a relatively insignificant part in overall device degradation. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189499
Volume :
52
Issue :
6
Database :
Academic Search Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
20230674
Full Text :
https://doi.org/10.1109/TNS.2005.860668