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Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlOx(N) achieved by adjusting Hf/Al compositional ratio.
- Source :
-
Journal of Applied Physics . 3/1/2006, Vol. 99 Issue 5, p054506. 6p. 1 Diagram, 9 Graphs. - Publication Year :
- 2006
-
Abstract
- We propose a method for restoring the symmetry in the threshold voltage (Vth) in complementary metal-oxide-semiconductor field-effect transistors (FETs) with a Hf-based high-k dielectric. This technique is based on the Al composition adjustment in the HfAlOx(N) dielectric film to achieve the symmetric Vth. The asymmetry of |Vth| in n and p metal-oxide-semiconductor FET (MOSFETs) due to the Fermi-level pinning at the interface between the poly-Si gate electrode and Hf-based high-k dielectric is considered to be induced independently by two kinds of interfacial dipoles. The adjustment of the Al content in HfAlOx(N) enables us to balance these dipoles. Vth values of n- and p-MOSFETs are shifted in the positive direction as the Al content in HfAlOx(N) increases. Symmetrical Vth values can be obtained for poly-Si and single fully silicided nickel gate electrodes when the Al contents are about 25 and 7 at. % in HfAlOx(N), respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 99
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 20192770
- Full Text :
- https://doi.org/10.1063/1.2178654