High-temperature ferromagnetism in Zn1− x Mn x O semiconductor thin films

Abstract: Clear evidence of ferromagnetic behavior at temperatures >400K as well as spin polarization of the charge carriers have been observed in Zn1− x Mn x O thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8 μ B/Mn at 350K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin-polarized and participate in the observed ferromagnetic behavior. [Copyright &y& Elsevier]