Dopant source choice for formation of p-type ZnO: Li acceptor.

Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4 Ω cm, Hall mobility of 2.65 cm2/V s, and hole concentration of 1.44×1017 cm-3 was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p-type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p-n homojunction was fabricated by deposition of a Li-doped p-type ZnO layer on an Al-doped n-type ZnO layer. [ABSTRACT FROM AUTHOR]