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Plasma-reactive SiC quantum dots on polycrystalline AlN films.
- Source :
-
Physics of Plasmas . Feb2006, Vol. 13 Issue 2, p023506. 4p. 3 Black and White Photographs, 1 Diagram, 1 Graph. - Publication Year :
- 2006
-
Abstract
- The self-assembly of SiC quantum dots (SiC QDs) formed on AlN films is investigated. Under optimized growth conditions, SiC QDs with a remarkably narrow size distribution on polycrystalline AlN films can be achieved with the presence of a wetting layer of SiC film by low-frequency inductively coupled plasma- (LF-ICP-) assisted magnetron sputtering. A transmission electron microscope (TEM), field-emission scanning electron microscope (FE-SEM) images, and an energy-dispersive x-ray (EDX) spectrometer clearly demonstrate that SiC QDs are formed on the polycrystalline AlN films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 1070664X
- Volume :
- 13
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Physics of Plasmas
- Publication Type :
- Academic Journal
- Accession number :
- 19933463
- Full Text :
- https://doi.org/10.1063/1.2173957