Back to Search
Start Over
Positron lifetime and microstructural characterisation of a-Si:H deposited by low temperature HW-CVD on paper substrates
- Source :
-
Applied Surface Science . Feb2006, Vol. 252 Issue 9, p3188-3193. 6p. - Publication Year :
- 2006
-
Abstract
- Abstract: In thin film electronic applications, the limiting factor, in terms of cost and usability, is generally the substrate material. As a consequence, different materials are being investigated as potential lightweight, inexpensive and flexible substrates. In this respect, we have been the first research collaboration to produce silicon-based electronics on paper substrates. Here we present structural characterisation of hydrogenated amorphous silicon (a-Si:H) layers deposited on 80gm−2 wood-free paper, with and without an intermediate metallic interlayer, using low temperature hot wire chemical vapour deposition (HW-CVD). Both pulsed positron beam profiling and X-ray diffraction studies indicate that the growth rate on the uncoated substrate is slightly higher than with prior metallization. There is no evidence of a crystalline phase or voids in the a-Si:H layers. The internal defect structure is similar, with a dominant dangling bond complex of similar size, which has a slightly longer lifetime than in layers grown at higher temperatures on conventional substrates. [Copyright &y& Elsevier]
- Subjects :
- *CHEMICAL vapor deposition
*THIN films
*SPECTRUM analysis
*NONMETALS
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 252
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 19768007
- Full Text :
- https://doi.org/10.1016/j.apsusc.2005.08.068