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Semiconductor physics: Transport news.
- Source :
-
Nature . 2/9/2006, Vol. 439 Issue 7077, p671-673. 3p. - Publication Year :
- 2006
-
Abstract
- The article presents a study which revealed the impact of the surface effects in thin silicon films on the transport of charge carriers and on device performance. The result was considered as a new opportunity for device physics. Researchers added that the position of the Fermi energy is still controlled during silicon doping. Thus, a need to develop a high-resolution technique for the implantation of dopant ions on semiconductor materials is needed.
Details
- Language :
- English
- ISSN :
- 00280836
- Volume :
- 439
- Issue :
- 7077
- Database :
- Academic Search Index
- Journal :
- Nature
- Publication Type :
- Academic Journal
- Accession number :
- 19722141
- Full Text :
- https://doi.org/10.1038/439671a