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Dual threshold voltages and power-gating design flows offer good results.
- Source :
-
EDN . 2/2/2006, Vol. 51 Issue 3, p65-70. 4p. 3 Diagrams. - Publication Year :
- 2006
-
Abstract
- The article explains the advantages of a dual threshold voltages and power-gating design flows to very-deep-submicron chips. The dual-voltages approach and power-gating design flows can achieve excellent results for both power and timing with a high degree of automation. It manages both leakage power and performance of electronic circuitry with little effort. The dual voltage methodologies rely on the use of low-voltage cells that have smaller propagation delay and higher leakage power and the use of higher voltage cells that have larger delay and lower leakage.
Details
- Language :
- English
- ISSN :
- 00127515
- Volume :
- 51
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- EDN
- Publication Type :
- Periodical
- Accession number :
- 19668442