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Dual threshold voltages and power-gating design flows offer good results.

Authors :
Shi, Kaijian
Source :
EDN. 2/2/2006, Vol. 51 Issue 3, p65-70. 4p. 3 Diagrams.
Publication Year :
2006

Abstract

The article explains the advantages of a dual threshold voltages and power-gating design flows to very-deep-submicron chips. The dual-voltages approach and power-gating design flows can achieve excellent results for both power and timing with a high degree of automation. It manages both leakage power and performance of electronic circuitry with little effort. The dual voltage methodologies rely on the use of low-voltage cells that have smaller propagation delay and higher leakage power and the use of higher voltage cells that have larger delay and lower leakage.

Details

Language :
English
ISSN :
00127515
Volume :
51
Issue :
3
Database :
Academic Search Index
Journal :
EDN
Publication Type :
Periodical
Accession number :
19668442