Cite
Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures
MLA
Srnanek, R., et al. “Determination of the Doping Concentration Profile in Si δ-Doped GaAs Layers Using Micro-Raman Spectroscopy of Bevelled Structures.” Thin Solid Films, vol. 497, no. 1/2, Mar. 2006, pp. 7–15. EBSCOhost, https://doi.org/10.1016/j.tsf.2005.08.155.
APA
Srnanek, R., Geurts, J., Lentze, M., Irmer, G., Kovac, J., Donoval, D., Mc Phail, D. S., Kordos, P., Florovic, M., Vincze, A., Sciana, B., Radziewicz, D., & Tlaczala, M. (2006). Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures. Thin Solid Films, 497(1/2), 7–15. https://doi.org/10.1016/j.tsf.2005.08.155
Chicago
Srnanek, R., J. Geurts, M. Lentze, G. Irmer, J. Kovac, D. Donoval, D.S. Mc Phail, et al. 2006. “Determination of the Doping Concentration Profile in Si δ-Doped GaAs Layers Using Micro-Raman Spectroscopy of Bevelled Structures.” Thin Solid Films 497 (1/2): 7–15. doi:10.1016/j.tsf.2005.08.155.