Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates

Abstract: Results of high-pressure directional growth of GaN on foreign substrates: SiC, sapphire and GaN/sapphire MOCVD templates are presented. The role of nitrogen pressure and supersaturation in the growth process is discussed. The conditions for stable growth of the nitride are determined. The results of the crystallization process are compared with those obtained for directional growth on pressure grown GaN crystals. [Copyright &y& Elsevier]