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Red VCSEL for high-temperature applications
- Source :
-
Journal of Crystal Growth . Dec2004, Vol. 272 Issue 1-4, p549-554. 6p. - Publication Year :
- 2004
-
Abstract
- Abstract: Measured power–current curves of 660nm AlGaInP-based oxide-confined vertical-cavity surface-emitting lasers (VCSEL) are compared with calculated data by a cylindrical heat dissipation model to improve heat removal out of the device. Pulsed lasing operation of a 670nm VCSEL at high temperatures is demonstrated. At +120°C heat sink temperature we exceeded 0.5mW and at +160°C still output power were achieved. [Copyright &y& Elsevier]
- Subjects :
- *OPTOELECTRONIC devices
*CRYSTAL growth
*LIGHT amplifiers
*HIGH temperatures
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 272
- Issue :
- 1-4
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 19278662
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2004.08.125