Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE

Authors :: Iida, Kazuyoshi
Kawashima, Takeshi
Miyazaki, Atsushi
Kasugai, Hideki
Mishima, Syunsuke
Honshio, Akira
Miyake, Yasuto
Iwaya, Motoaki
Kamiyama, Satoshi
Amano, Hiroshi
Akasaki, Isamu
Source :: Journal of Crystal Growth. Dec2004, Vol. 272 Issue 1-4, p270-273. 4p.
Publication Year :: 2004
Abstract: Abstract: We have developed GaN/AlGaN multi-quantum-well (MQW) UV-laser diode (UV-LD) grown on sapphire substrate. The combination of a low-temperature-deposited AlN interlayer technology and lateral seeding epitaxy yielded crack-free and low-dislocation-density AlGaN. The lasing wavelength under pulsed current injection at room temperature was 350.9nm, which is the shortest wavelength ever reported. [Copyright &y& Elsevier]