Back to Search
Start Over
Gas cluster ion beam infusion processing of semiconductors
- Source :
-
Nuclear Instruments & Methods in Physics Research Section B . Jan2006, Vol. 242 Issue 1/2, p427-430. 4p. - Publication Year :
- 2006
-
Abstract
- Abstract: The application of gas cluster ion beam (GCIB) infusion in advanced IC fabrication is described. GCIB processes for surface modifications, additive (junction formation, deposition) and subtractive (etch) processing are discussed. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 242
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section B
- Publication Type :
- Academic Journal
- Accession number :
- 19182459
- Full Text :
- https://doi.org/10.1016/j.nimb.2005.08.074