Measurement of Zn0.95Cd0.05O/ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy.

Authors :: Jau-Jiun Chen
Ren, F.
Yuanjie Li
Norton, D. P.
Pearton, S. J.
Osinsky, A.
Dong, J. W.
Chow, P. P.
Weaver, J. F.
Source :: Applied Physics Letters. 11/7/2005, Vol. 87 Issue 19, p192106. 3p. 1 Diagram, 1 Chart, 2 Graphs.
Publication Year :: 2005
Abstract: X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (ΔEv) of Zn0.95Cd0.05O/ZnO heterostructures grown by rf plasma-enhanced molecular-beam epitaxy. A value of ΔEv=0.17±0.03 eV was obtained by using the Zn 2p energy level as a reference. Given the experimental band gap of 2.9 eV for the Zn0.95Cd0.05O, this would indicate a conduction band offset ΔEC of 0.30 eV in this system. [ABSTRACT FROM AUTHOR]

Subjects :: *X-rays
*PHOTOELECTRONS
*SPECTRUM analysis
*FORCE & energy
*CONDUCTION electrons
*MOLECULAR beams

Full Text Access

Tools