Structural evolution of SiN x films deposited by ECR and its light emission

Abstract: Structural and optical properties of a-SiN x films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) have been investigated. The Fourier transform infrared (FTIR) spectroscopy shows the structural evolution of the SiN x films, which are defined as Si-rich SiN x and N-rich SiN x films, also confirmed by Raman spectroscopy. The origin of the light emission for SiN x films may be attributed to two mechanisms, i.e., quantum confinement effect (QCE) and transition of defect energy levels. The correlation between light emission and structures of SiN x films is discussed. [Copyright &y& Elsevier]