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Structural evolution of SiN x films deposited by ECR and its light emission
- Source :
-
Physica E . Dec2005, Vol. 30 Issue 1/2, p41-44. 4p. - Publication Year :
- 2005
-
Abstract
- Abstract: Structural and optical properties of a-SiN x films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) have been investigated. The Fourier transform infrared (FTIR) spectroscopy shows the structural evolution of the SiN x films, which are defined as Si-rich SiN x and N-rich SiN x films, also confirmed by Raman spectroscopy. The origin of the light emission for SiN x films may be attributed to two mechanisms, i.e., quantum confinement effect (QCE) and transition of defect energy levels. The correlation between light emission and structures of SiN x films is discussed. [Copyright &y& Elsevier]
- Subjects :
- *SPECTRUM analysis
*OPTICAL properties
*RAMAN spectroscopy
*THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 13869477
- Volume :
- 30
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Physica E
- Publication Type :
- Academic Journal
- Accession number :
- 19045088
- Full Text :
- https://doi.org/10.1016/j.physe.2005.07.007