Cite
Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2 (0001)
MLA
Armitage, R., et al. “Mechanism of Stabilization of Zincblende GaN on Hexagonal Substrates: Insight Gained from Growth on ZrB2 (0001).” Journal of Crystal Growth, vol. 284, no. 3/4, Nov. 2005, pp. 369–78. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2005.07.037.
APA
Armitage, R., Nishizono, K., Suda, J., & Kimoto, T. (2005). Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2 (0001). Journal of Crystal Growth, 284(3/4), 369–378. https://doi.org/10.1016/j.jcrysgro.2005.07.037
Chicago
Armitage, R., K. Nishizono, J. Suda, and T. Kimoto. 2005. “Mechanism of Stabilization of Zincblende GaN on Hexagonal Substrates: Insight Gained from Growth on ZrB2 (0001).” Journal of Crystal Growth 284 (3/4): 369–78. doi:10.1016/j.jcrysgro.2005.07.037.