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Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method.

Authors :: Chen, Y. W.
Liu, Y. C.
Lu, S. X.
Xu, C. S.
Shao, C. L.
Wang, C.
Zhang, J. Y.
Lu, Y. M.
Shen, D. Z.
Fan, X. W.
Source :: Journal of Chemical Physics. 10/1/2005, Vol. 123 Issue 13, p134701. 5p. 1 Diagram, 4 Graphs.
Publication Year :: 2005
Abstract: Self-assembled zinc oxide (ZnO) and indium-doping zinc oxide (ZnO:In) nanorod thin films were synthesized on quartz substrates without catalyst in aqueous solution by sol-gel method. The samples were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), Raman-scattering spectroscopy, room-temperature photoluminescence (PL) spectra, and temperature-dependent PL spectra measurements. XRD and Raman spectra illustrated that there were no single In2O3 phase in ZnO lattice after indium doping. The PL spectra of ZnO showed a strong UV emission band located at 394 nm and a very weak visible emission associated with deep-level defects. Indium incorporation induced the shift of optical band gap, quenching of the near-band-edge photoluminescence and enhanced LO mode multiphonon resonant Raman scattering in ZnO crystals at different temperatures. Abnormal temperature dependence of UV emission integrated intensity of ZnO and ZnO:In samples is observed. The local state emission peak of ZnO:In samples at 3.37 eV is observed in low-temperature PL spectra. The near-band-edge emission peak at room temperature was a mixture of excitons and impurity-related transitions for both of two samples. [ABSTRACT FROM AUTHOR]